深圳市勤思达科技有限公司

型号 MJ21196 MJ21196 MJ21196 MJ21196

制商：ON Semiconductor
产品种类：Transistors Bipolar (BJT)
晶体管极性：PNP
集电极—发射极电压 VCEO：250 V
发射极 - 基极电压 VEBO：5 V
直流电集电极电流：16 A
直流集电极/Base Gain hfe Min：25
配置：Single
工作频率：4 MHz
工作温度：+ 150 C
安装风格：Through Hole
封装 / 箱体：TO-204-2 (TO-3)
封装：Tray
集电极连续电流：16 A
工作温度：- 65 C
功率耗散：250 W

工厂包装数量：100

The MJ21195G and MJ21196G utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain

• Excellent Gain Linearity

• High SOA

• These Devices are Pb−Free and are RoHS Compliant*

Collector−Emitter Voltage VCEO 250 Vdc

Collector−Base Voltage VCBO 400 Vdc

Emitter−Base Voltage VEBO 5 Vdc

Collector−Emitter Voltage − 1.5V VCEX 400 Vdc

Collector Current − Continuous IC 16 Adc

Collector Current − Peak (Note 1) ICM 30 Adc

Base Current − Continuous IB 5 Adc

Total Device Dissipation @ TC = 25C

Derate above 25C

PD 250

1.43

W

W/C

Operating and Storage Junction

Temperature Range

TJ, Tstg −65 to +200 C