描述:Silicon NPN Power Transistors
类别:分离式半导体产品
家庭:晶体管(BJT) - 单路
系列:-
晶体管类型:NPN
电流 - 集电极 (Ic)():8A
电压 - 集电极发射极击穿():150V
Ib、Ic条件下的Vce饱和度():500mV @ 100mA,1A
电流 - 集电极截止():100μA
在某 Ic、Vce 时的直流电流增益 (hFE):20 @ 4A,2V
功率 - :50W
频率 - 转换:30MHz
安装类型:通孔
封装/外壳:TO-220-3
供应商设备封装:TO-220AB
包装:管件
其它名称:MJE15030OS
标准包装:50
These devices are designed for use as high−frequency drivers in
audio amplifiers.
Features
• High Current Gain − Bandwidth Product
• TO−220 Compact Package
• These Devices are Pb−Free and are RoHS Compliant*
Collector−Emitter Voltage
MJE15028G, MJE15029G
MJE15030G, MJE15031G
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)