深圳市勤思达科技有限公司

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The MJ21195G and MJ21196G utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain

• Excellent Gain Linearity

• High SOA

• These Devices are Pb−Free and are RoHS Compliant*

                                          MJ21195G − PNP MJ21196G − NPN

There are two limitations on the power handling

ability of a transistor; average junction temperature

and secondary breakdown. Safe operating area curves

indicate IC − VCE limits of the transistor that must be

observed for reliable operation; i.e., the transistor

must not be subjected to greater dissipation than the

curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C;

TC is variable depending on conditions. At high case

temperatures, thermal limitations will reduce the

power than can be handled to values less than the

limitations imposed by second breakdown.

                                            MJ21195G − PNP MJ21196G − NPN