深圳市勤思达科技有限公司

型号：MJ21193G MJ21193G MJ21193G

类别：分离式半导体产品

•无铅包可用

The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain

• Excellent Gain Linearity

• High SOA

• These Devices are Pb−Free and are RoHS Compliant*

                                                             MJ21193 − PNP MJ21194 − NPN

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE limits

of the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 200°C; TC is variable

depending on conditions. At high case temperatures,

thermal limitations will reduce the power than can be handled

to value