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询价相关产品
产品信息
描述：Silicon PNP Power Transistors
类别：分离式半导体产品
家庭：晶体管(BJT) - 单路
系列：- MJE2955T MJE2955T
晶体管类型：PNP
电流 - 集电极 (Ic)（）：10A
电压 - 集电极发射极击穿（）：60V
Ib、Ic条件下的Vce饱和度（）：8V @ 3.3A，10A
电流 - 集电极截止（）：700μA
在某 Ic、Vce 时的直流电流增益 (hFE)：20 @ 4A，4V
功率 - ：75W
频率 - 转换：2MHz
安装类型：通孔
封装/外壳：TO-220-3
供应商设备封装：TO-220AB
包装：管件
其它名称：MJE2955TOS
标准包装：50
备注：MJE2955T 主要设计用于通用放大器使用，开关应用。
■ STMicroelectronics PREFERRED
SALESTYPES
■ COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION
The MJE3055T is a silicon Epitaxial-Base NPN
transistor in Jedec TO-220 package. It is
intended for power switching circuits and
general-purpose amplifiers. The complementary
PNP type is MJE2955T.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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All other names are the property of their respective owners.