深圳市勤思达科技有限公司

•无铅包可用

MJ11032G NPN  MJ11033G PNP 晶体管

MJ11028, MJ11030,

MJ11032 (NPN)

MJ11029, MJ11033 (PNP)

High-Current

Complementary Silicon

Power Transistors

High−Current Complementary Silicon Power Transistors are for use

as output devices in complementary general purpose amplifier

applications.

Features

• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

• Curves to 100 A (Pulsed)

• Diode Protection to Rated IC

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Junction Temperature to +200C

• Pb−Free Packages are Available*

There are two limitations on the power−handling ability

of a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 200C; TC is

variable depending on conditions. At high case

MJ11032G NPN  MJ11033G PNP 晶体管