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产品分类
询价产品信息
品牌：IR
厂家：IRF [International Rectifier]
描述：DIGITAL AUDIO MOSFET
类别：分离式半导体产品
家庭：FET - 单
系列：HEXFET®
FET 型：MOSFET P 通道，金属氧化物
FET 特点：标准型
漏极至源极电压(Vdss)：55V
电流 - 连续漏极(Id) @ 25° C：14A
开态Rds（）@ Id, Vgs @ 25° C：105 毫欧 @ 3.4A，10V
Id 时的 Vgs(th)（）：1V @ 250μA
闸电荷(Qg) @ Vgs：47nC @ 10V
输入电容 (Ciss) @ Vds：660pF @ 50V
功率 - ：33W
安装类型：通孔
封装/外壳：TO-220-3 整包
供应商设备封装：TO-220AB 整包
包装：管件
其它名称：*IRLIB9343PB
标准包装：3,000
封装：TO-220
Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier
Applications
Low RDSON for Improved Efficiency
Low QG and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
Lead-Free
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors
such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and
repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable
device for Class-D audio amplifier applications.
IRLIB9343PBF IRLIB9343PBF IRLIB9343PBF IRLIB9343PRLIB9343 RLIB9343PB