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产品分类
产品信息
品牌:IR
厂家:IRF [International Rectifier]
描述:DIGITAL AUDIO MOSFET
类别:分离式半导体产品
家庭:FET - 单
系列:HEXFET®
FET 型:MOSFET P 通道,金属氧化物
FET 特点:标准型
漏极至源极电压(Vdss):55V
电流 - 连续漏极(Id) @ 25° C:14A
开态Rds()@ Id, Vgs @ 25° C:105 毫欧 @ 3.4A,10V
Id 时的 Vgs(th)():1V @ 250μA
闸电荷(Qg) @ Vgs:47nC @ 10V
输入电容 (Ciss) @ Vds:660pF @ 50V
功率 - :33W
安装类型:通孔
封装/外壳:TO-220-3 整包
供应商设备封装:TO-220AB 整包
包装:管件
其它名称:*IRLIB9343PB
标准包装:3,000
封装:TO-220
Features
Advanced Process Technology
Key Parameters Optimized for Class-D Audio Amplifier
Applications
Low RDSON for Improved Efficiency
Low QG and Qsw for Better THD and Improved Efficiency
Low Qrr for Better THD and Lower EMI
175°C Operating Junction Temperature for Ruggedness
Repetitive Avalanche Capability for Robustness and
Reliability
Lead-Free

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the
latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode
reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors
such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and
repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable
device for Class-D audio amplifier applications.

IRLIB9343PBF IRLIB9343PBF IRLIB9343PBF IRLIB9343PRLIB9343 RLIB9343PB