深圳市勤思达科技有限公司

Features

 Advanced Process Technology

 Key Parameters Optimized for Class-D Audio Amplifier

Applications

 Low RDSON for Improved Efficiency

 Low QG and Qsw for Better THD and Improved Efficiency

 Low Qrr for Better THD and Lower EMI

 175°C Operating Junction Temperature for Ruggedness

 Repetitive Avalanche Capability for Robustness and

Reliability

 Lead-Free

This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the

latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode

reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors

such as efficiency, THD and EMI. Additional features of this MosFET are 175°C operating junction temperature and

repetitive avalanche capability. These features combine to make this MosFET a highly efficient, robust and reliable

device for Class-D audio amplifier applications.

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