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相关产品
产品信息
制造商:ON Semiconductor
产品种类:Transistors Bipolar (BJT)
晶体管极性:PNP
集电极—发射极电压 VCEO:250 V
发射极 - 基极电压 VEBO:5 V
直流电集电极电流:16 A
直流集电极/Base Gain hfe Min:15
配置:Single
工作频率:4 MHz
工作温度:+ 150 C
安装风格:Through Hole
封装 / 箱体:TO-204-2 (TO-3)
封装:Tray
集电极连续电流:16 A
工作温度:- 65 C
功率耗散:250 W
工厂包装数量:100
描述:该MJ15023和MJ15025是百百功率晶体管专为高功率音频,磁头定位器和其它线性应用程序
备MJ15023 MJ15025音频功率管
The MJ15023 and MJ15025 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area
• High DC Current Gain
• Complementary to MJ15022 (NPN), MJ15024 (NPN)
• These Devices are Pb−Free and are RoHS Compliant*
The MJ15023 and MJ15025 are power transistors designed for high
power audio, disk head positioners and other linear applications.
Features
• High Safe Operating Area
• High DC Current Gain
• Complementary to MJ15022 (NPN), MJ15024 (NPN)
• These Devices are Pb−Free and are RoHS Compliant*
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%.