•高安全工作区 - 1.0 A / 100 V @ 1秒
MJL4281A (NPN)
MJL4302A (PNP)
Complementary NPN-PNP
Silicon Power Bipolar
Transistors
The MJL4281A and MJL4302A are power transistors for high
power audio.
Features
• 350 V Collector−Emitter Sustaining Voltage
• Gain Complementary:
Gain Linearity from 100 mA to 5 A
High Gain − 80 to 240
hFE = 50 (min) @ IC = 8 A
• Low Harmonic Distortion
• High Safe Operation Area − 1.0 A/100 V @ 1 Second
• High fT
• Pb−Free Packages are Available*