深圳市勤思达科技有限公司

备注：MJL21193和MJL21194利用穿孔发射技术和专门用于高功率音频输出而设计，磁头定位器和线性应用。

                           PNP     MJL21193G                                                       NPN     MJL21194G

The MJL21193 and MJL21194 utilize Perforated Emitter

technology and are specifically designed for high power audio output,

disk head positioners and linear applications.

                                   PNP     MJL21193                                                       NPN     MJL21194

Features

• Total Harmonic Distortion Characterized

• High DC Current Gain −

hFE = 25 Min @ IC

= 8 Adc

• Excellent Gain Linearity

• High SOA: 2.25 A, 80 V, 1 Second

• These are Pb−Free Devices*

There are two limitations on the power handling ability of

a transistor; average junction temperature and secondary

breakdown. Safe operating area curves indicate IC − VCE limits

of the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

than the curves indicate.

The data of Figure 13 is based on TJ(pk) = 150°C; TC is variable

depending on conditions. At high case temperatures,

thermal limitations will reduce the power than can be handled

to values less than the limitations imposed by second breakdown.

MJL21194G