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朱亮成 
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IRG4PF50WD
• Optimized for use in Welding and Switch-Mode
Power Supply applications
• Industry benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
• Low IGBT conduction losses
• Latest technology IGBT design offers tighter
parameter distribution coupled with
exceptional reliability
• IGBT co-packaged with HEXFREDTM ultrafast,
ultra-soft-recovery anti-parallel diodes for use in
bridge configurations
• Industry standard TO-247AC package
Benefits
IRG4PF50WD
Parameter Min. Typ. Max. Units
RθJC Junction-to-Case - IGBT ––– ––– 0.64
RθJC Junction-to-Case - Diode ––– ––– 0.83 °C/W
RθCS Case-to-Sink, flat, greased surface ––– 0.24 –––
RθJA Junction-to-Ambient, typical socket mount ––– ––– 40
Wt Weight ––– 6 (0.21) ––– g (oz)
Thermal Resistance
• Lower switching losses allow more cost-effective
operation and hence efficient replacement of larger-die
MOSFETs up to 100kHz
• HEXFREDTM diodes optimized for performance with IGBTs.
Minimized recovery characteristics reduce noise, EMI and
switching losses
IRG4PF50WD
TO-247AC
VCES = 900V
VCE(on) typ. = 2.25V
@VGE = 15V, IC = 28A
Parameter Max. Units
VCES Collector-to-Emitter Breakdown Voltage 900 V
IC @ TC = 25°C Continuous Collector Current 51
IC @ TC = 100°C Continuous Collector Current 28 A
ICM Pulsed Collector Current 204
ILM Clamped Inductive Load Current ‚ 204
IF @ TC = 100°C Diode Continuous Forward Current 16
IFM Diode Maximum Forward Current 204
VGE Gate-to-Emitter Voltage ± 20 V
PD @ TC = 25°C Maximum Power Dissipation 200
PD @ TC = 100°C Maximum Power Dissipation 78
TJ Operating Junction and -55 to + 150
TSTG Storage Temperature Range
IRG4PF50WDPBFIRG4PF50WDPBF
IRG4PF50WDPBF
IRG4PF50WDPBF
IRG4PF50WD IRG4PF50WDPBF
询价
