相关证件：
会员类型：
会员年限：13年
朱亮成 
电话：0755-83264115
手机：15889758566
18948336722
电话：0755-82710921
手机：13714022780
BS107ARL1G
封装 / 箱体:TO-92-3
通道数量:1 Channel
晶体管极性:N-ChannelVds-
漏源极击穿电压:200 VId-
连续漏极电流:250 mARds On-
漏源导通电阻:6.4 OhmsVgs -
栅极-源极电压:20 V
工作温度:- 55 C
工作温度:+ 150 C
Pd-功率耗散:350 mW
配置:Single通道模式:Enhancement
封装:Cut Tape封装:Reel
高度:5.33 mm 长度:5.2 mm
产品:MOSFET Small Signal
系列:BS107A
晶体管类型:1 N-Channel
类型:MOSFET 宽度:4.19 mm
商标:ON Semiconductor
正向跨导 - 值:0.0004 S
产品类型:MOSFET
工厂包装数量:2000
子类别:MOSFETs
单位重量:453.600 mg
BS107ARL1GBS107ARL1GBS107ARL1GBS107ARL1GBS107ARL1GBS107AR
Zero−Gate−Voltage Drain Current (VDS = 130 Vdc, VGS = 0) IDSS − − 30 nAdc
Drain−Source Breakdown Voltage (VGS = 0, ID = 100 Adc) V(BR)DSX 200 − − Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IGSS − 0.01 10 nAdc
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) VGS(Th) 1.0 − 3.0 Vdc
Static Drain−Source On Resistance
BS107 (VGS = 2.6 Vdc, ID = 20 mAdc)
(VGS = 10 Vdc, ID = 200 mAdc)
BS107A (VGS = 10 Vdc)
(ID = 100 mAdc)
(ID = 250 mAdc)
rDS(on)
−
−
−
−
−
−
4.5
4.8
28
14
6.0
6.4
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss − 60 − pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss − 6.0 − pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss − 30 − pF
Forward Transconductance
(VDS = 25 Vdc, ID = 250 mAdc)
gfs 200 400 − mmhos
SWITCHING CHARACTERISTICS
Turn−On Time ton − 6.0 15 ns
Turn−Off Time toff − 12 15 ns
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
Fig
询价
