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会员年限：13年
朱亮成 
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IRFP450APBF IRFP450APBF IRFP450APBF IRFP450APBF
安装风格:Through Hole
封装 / 箱体:TO-247-3
通道数量:1 Channel
晶体管极性:N-Channel
Vds-漏源极击穿电压:500 V
Id-连续漏极电流:14 ARds
On-漏源导通电阻:400 mOhms
Vgs th-栅源极阈值电压:2 V
Vgs - 栅极-源极电压:10 V
Qg-栅极电荷:64 nC
工作温度:- 55 C
工作温度:+ 150 C
Pd-功率耗散:190 W
配置:Single
通道模式:Enhancement
封装:Tube
系列:IRFP
晶体管类型:1 N-Channel
商标:Vishay / Siliconix
正向跨导 - 值:7.8 S
下降时间:29 ns
产品类型:MOSFET
上升时间:36 ns
工厂包装数量:500
子类别:MOSFETs
典型关闭延迟时间:35 ns
典型接通延迟时间:15 ns
单位重量:38 g
FEATURES
• Low Gate Charge Qg Results in Simple Drive
Requirement
• Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
• Fully Characterized Capacitance and
Avalanche Voltage and Current
• Effective Coss Specified
• Lead (Pb)-free Available
APPLICATIONS
• Switch Mode Power Supply (SMPS)
• Uninterruptable Power Supply
• High Speed Power Switching
TYPICAL SMPS TOPOLOGIES
• Two Transistor Forward
• Half Bridge, Full Bridge
• PFC Boost
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Starting TJ = 25 °C, L = 7.8 mH, RG = 25 Ω, IAS = 14 A (see fig. 12).
c. ISD ≤ 14 A, dI/dt ≤ 130 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
询价
