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朱亮成 
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IRFB3607PbF
IRFS3607PbF
IRFSL3607PbF
IRFB3607PBF
IRFB3607PBF
IRFB3607PBF
Applications
High Efficiency Synchronous Rectification in
SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
HEXFET
Benefits
Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
Fully Characterized Capacitance and
Avalanche SOA
Enhanced body diode dV/dt and dI/dt
Capability
w
Calculated continuous current based on maximum allowable junction
temperature. Note that current limitations arising from heating of the
device leads may occur with some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.12mH
RG = 25, IAS = 46A, VGS =10V. Part not recommended for use
above this value.
ISD 46A, di/dt 1920A/μs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Ris measured at TJ approximately 90°C.
询价
