深圳市勤思达科技有限公司

HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast

recoveryanti-paralleldiode

Features:

TRENCHSTOPTMtechnologyoffering

•verylowVCEsat

•lowEMI

•Verysoft,fastrecoveryanti-paralleldiode

•maximumjunctiontemperature175°C

•qualifiedaccordingtoJEDECfortargetapplications

•Pb-freeleadplating;RoHScompliant

•completeproductspectrumandPSpiceModels:

Applications:

•uninterruptiblepowersupplies

•weldingconverters

•converterswithhighswitchingfrequency

KeyPerformanceandPackageParametersT

Parameter Symbol Value Unit

Collector-emitter voltage VCE 1200 V

DCcollectorcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IC 80.0

40.0A

Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A

TurnoffsafeoperatingareaVCE ≤1200V,Tvj ≤175°C - 160.0 A

Diodeforwardcurrent,limitedbyTvjmax

TC=25°C

TC=100°C

IF 40.0

20.0

A

Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A

Gate-emitter voltage VGE ±20 V

Short circuit withstand time

VGE=15.0V,VCC ≤600V

Allowed number of short circuits < 1000

Time between short circuits: ≥ 1.0s

Tvj=175°C

tSC

10

μs

PowerdissipationTC=25°C

PowerdissipationTC=100°C Ptot

483.0

220.0 W

Operating junction temperature Tvj -40...+175 °C

Storage temperature Tstg -55...+150 °C

Soldering temperature,

wave soldering 1.6mm (0.063in.) from case for 10s 260 °C

Mounting torque, M3 screw

Maximum of mounting processes: 3 M 0.6 Nm

ThermalResistance

Parameter Symbol Conditions Max.

IKW40N120H3第三代1200V IGBT晶体管

IKW40N120H3第三代1200V IGBT晶体管

IKW40N120H3第三代1200V IGBT晶体管