- 非IC关键词
深圳市勤思达科技有限公司
- 卖家积分:
营业执照:已审核经营模式:贸易/代理/分销所在地区:广东 深圳企业网站:
http://qsd.dzsc.com
收藏本公司 人气:1208324
企业档案
- 相关证件:
 
- 会员类型:
- 会员年限:14年
- 阿库IM:
- 地址:深圳市福田区华强北赛格科技园四栋中12楼A4座—2L
- 传真:0755-83955172
- E-mail:1282971461@qq.com
相关产品
产品信息
厂家:TOSHIBA
描述:Silicon NPN Power Transistors
类别:分离式半导体产品
家庭:晶体管(BJT) - 单路

晶体管类型:NPN
电流 - 集电极 (Ic)():1A
电压 - 集电极发射极击穿():230V
Ib、Ic条件下的Vce饱和度():1.5V @ 50mA,500mA
电流 - 集电极截止():-
在某 Ic、Vce 时的直流电流增益 (hFE):100 @ 100mA,5V
功率 - :2W
频率 - 转换:100MHz
安装类型:通孔
封装/外壳:TO-220-3 整包
供应商设备封装:TO-220NIS
包装:管件
标准包装:50
数量:11850
单价:面议
For Muting and Switching Applications
• High emitter-base voltage: VEBO = 25 V (min)
• High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)
• Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
• High DC current gain: hFE = 200 to 1200
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 20 V
Emitter-base voltage VEBO 25 V
Collector current IC 300 mA
Base current IB 60 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc)
