封装 / 箱体:SOT-346
High emitter-base voltage: VEBO = 25 V (min)
• High reverse hFE: Reverse hFE = 150 (typ.) (VCE = −2 V, IC = −4 mA)
• Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA)
• High DC current gain: hFE = 200 to 1200
• Small package
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 20 V
Emitter-base voltage VEBO 25 V
Collector current IC 300 mA
Base current IB 60 mA
Collector power dissipation PC 150 mW
Junction temperature Tj 125 °C
Storage temperature range Tstg −55 to 125 °C