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相关产品
产品信息
型号 MJ21196 MJ21196 MJ21196 MJ21196
制商:ON Semiconductor
产品种类:Transistors Bipolar (BJT)
晶体管极性:PNP
集电极—发射极电压 VCEO:250 V
发射极 - 基极电压 VEBO:5 V
直流电集电极电流:16 A
直流集电极/Base Gain hfe Min:25
配置:Single
工作频率:4 MHz
工作温度:+ 150 C
安装风格:Through Hole
封装 / 箱体:TO-204-2 (TO-3)
封装:Tray
集电极连续电流:16 A
工作温度:- 65 C
功率耗散:250 W
工厂包装数量:100
The MJ21195G and MJ21196G utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant*
Collector−Emitter Voltage VCEO 250 Vdc
Collector−Base Voltage VCBO 400 Vdc
Emitter−Base Voltage VEBO 5 Vdc
Collector−Emitter Voltage − 1.5V VCEX 400 Vdc
Collector Current − Continuous IC 16 Adc
Collector Current − Peak (Note 1) ICM 30 Adc
Base Current − Continuous IB 5 Adc
Total Device Dissipation @ TC = 25C
Derate above 25C
PD 250
1.43
W
W/C
Operating and Storage Junction
Temperature Range
TJ, Tstg −65 to +200 C