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产品信息
Absolute maximum ratings
Parameter Symbol Value Unit Test condition
peak repetitive off-stage voltage VDRM, VRRM 600 V
on-state RMS current IT(RMS) 4 A TL<66oC
NON repetitive surge peak on-state current ITSM 25 A Tp=20ms, Tj=25 oC
critical rate of rise on-state current dI/dt (Q1-3) 50 A/Ms
ITM=20A, TG=0.2A
peak gate current IGM 2 A
average gate power dissipation PG(AV) 0.5 W
storage temperature range Tstg -40 to +150 oC
operating junction temperature range Tj 125 oC
Electrical characteristics ( Tj=25oC) unless otherwise specified
Parameter Symbol Value Unit Test condition
gate trigger current IGT <10 mA T2+G+ VD=12V, IT=0.1A
<10 mA T2+G- VD=12V, IT=0.1A
<10 mA T2-G- VD=12V, IT=0.1A
<25 mA T2-G+ VD=12V, IT=0.1A
gate trigger voltage VGT <1.5 V VD=12V, IT=0.1A
hold current IH <30 mA VD=12V, IT=0.1A
critical rate of rise off-state voltage dv/dt >50 V/Ms
VD=67%VDRM
on-state voltage VTM <1.7 V IT=5A
off-state leakage current IDRM <0.5 mA VD=VDRM; Tj=125oC
Rth(j-a) 60
Rth(j-c) <3.7
thermal resistance oC/W
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi
lity for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" paramet
ers which may be included on RECTRON data sheets and/ or specifications ca
n and do vary in different applications and actual performance may vary over ti
me. Rectron Inc does not assume any liability arising out of the application or
use of any product or circui
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