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MUR8100EG MUR8100EG MUR8100EG MUR8100EG
The MUR8100 and MUR880E diodes are designed for use in
switching power supplies, inverters and as free wheeling diodes.
Features
• 20 mJ Avalanche Energy Guaranteed
• Excellent Protection Against Voltage Transients in Switching
Inductive Load Circuits
• Ultrafast 75 Nanosecond Recovery Time
• 175°C Operating Junction Temperature
• Popular TO−220 Package
• Epoxy Meets UL 94 V−0 @ 0.125 in.
• Low Forward Voltage
• Low Leakage Current
• High Temperature Glass Passivated Junction
• Reverse Voltage to 1000 V
• Pb−Free Packages are Available*
Mechanical Characteristics:
• Case: Epoxy, Molded
• Weight: 1.9 Grams (Approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
The unclamped inductive switching circuit shown in
Figure 6 was used to demonstrate the controlled avalanche
capability of the new “E’’ series Ultrafast rectifiers. A
mercury switch was used instead of an electronic switch to
simulate a noisy environment when the switch was being
opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
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