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询价相关产品
产品信息
HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast
recoveryanti-paralleldiode
Features:
TRENCHSTOPTMtechnologyoffering
•verylowVCEsat
•lowEMI
•Verysoft,fastrecoveryanti-paralleldiode
•maximumjunctiontemperature175°C
•qualifiedaccordingtoJEDECfortargetapplications
•Pb-freeleadplating;RoHScompliant
•completeproductspectrumandPSpiceModels:
Applications:
•uninterruptiblepowersupplies
•weldingconverters
•converterswithhighswitchingfrequency
KeyPerformanceandPackageParametersT
Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC 80.0
40.0A
Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 160.0 A
TurnoffsafeoperatingareaVCE ≤1200V,Tvj ≤175°C - 160.0 A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF 40.0
20.0
A
Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 160.0 A
Gate-emitter voltage VGE ±20 V
Short circuit withstand time
VGE=15.0V,VCC ≤600V
Allowed number of short circuits < 1000
Time between short circuits: ≥ 1.0s
Tvj=175°C
tSC
10
μs
PowerdissipationTC=25°C
PowerdissipationTC=100°C Ptot
483.0
220.0 W
Operating junction temperature Tvj -40...+175 °C
Storage temperature Tstg -55...+150 °C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s 260 °C
Mounting torque, M3 screw
Maximum of mounting processes: 3 M 0.6 Nm
ThermalResistance
Parameter Symbol Conditions Max.
IKW40N120H3第三代1200V IGBT晶体管
IKW40N120H3第三代1200V IGBT晶体管
IKW40N120H3第三代1200V IGBT晶体管