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相关产品
产品信息
描述:isc Silicon NPN Darlington Power Transistor
类别:分离式半导体产品
家庭:晶体管(BJT) - 单路
系列:-MJ11032 MJ11032
晶体管类型:NPN - 达林顿
电流 - 集电极 (Ic)():50A
电压 - 集电极发射极击穿():120V
Ib、Ic条件下的Vce饱和度():3.5V @ 500mA,50A
电流 - 集电极截止():2mA
在某 Ic、Vce 时的直流电流增益 (hFE):1000 @ 25A,5V
功率 - :300W
频率 - 转换:-
安装类型:通孔
封装/外壳:TO-204AE
供应商设备封装:TO-3
包装:托盘
标准包装:100
其它名称:MJ11032OS
备注:MJ11016高电流互补硅功率晶体管的使用如在补充通用放大器的输出设备应用程序。
特点:
•高直流电流增益 −hFE= 1000 (值) @我C= 25 ADC
hFE= 400 (值) @我C= 50 ADC
•曲线100 A(脉冲)
•保护二极管额定我
•单片式结构,具有内置基射极分流电阻
•结温为+ 200_C
•无铅包可用
High−Current Complementary Silicon Power Transistors are for use
as output devices in complementary general purpose amplifier
applications.
Features
• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc
hFE = 400 (Min) @ IC = 50 Adc
• Curves to 100 A (Pulsed)
• Diode Protection to Rated IC
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• Junction Temperature to +200C
• Pb−Free Packages are Available*
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%.
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)
MJ11028, MJ11030,
MJ11032 (NPN)
MJ11029, MJ11033 (PNP)