深圳市勤思达科技有限公司

•无铅包可用

High−Current Complementary Silicon Power Transistors are for use

as output devices in complementary general purpose amplifier

applications.

Features

• High DC Current Gain − hFE = 1000 (Min) @ IC = 25 Adc

hFE = 400 (Min) @ IC = 50 Adc

• Curves to 100 A (Pulsed)

• Diode Protection to Rated IC

• Monolithic Construction with Built−In Base−Emitter Shunt Resistor

• Junction Temperature to +200C

• Pb−Free Packages are Available*

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

1. Pulse Test: Pulse Width = 5 s, Duty Cycle ≤ 10%.

MJ11028, MJ11030,

MJ11032 (NPN)

MJ11029, MJ11033 (PNP)

MJ11028, MJ11030,

MJ11032 (NPN)

MJ11029, MJ11033 (PNP)