深圳市勤思达科技有限公司

Features

■ Low collector-emitter saturation voltage

■ Complementary NPN - PNP transistors

Applications

■ General purpose linear and switching

Description

The devices are manufactured in planar

technology with “base island” layout and

monolithic Darlington configuration. The resulting

transistors show exceptional high gain

performance coupled with very low saturation

voltage.

Symbol Parameter Value Unit

NPN TIP120 TIP121 TIP122

PNP TIP125 TIP126 TIP127

VCBO Collector-base voltage (IE = 0) 60 80 100 V

VCEO Collector-emitter voltage (IB = 0) 60 80 100 V

VEBO Emitter-base voltage (IC = 0) 5 V

IC Collector current 5 A

ICM Collector peak current 8 A

IB Base current 0.12 APTOT

Total dissipation at Tc ≤ 25 °C

Tamb ≤ 25 °C652W

Tstg Storage temperature -65 to 150 °C

TJ Max. operating junction temperature 150

TIP122